Picosecond Photodetector using GaAs MESFET

GaAs/AlGaAs nanowire photodetector.

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...

Testing of a GaAs MESFET Static RAM

This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...

GaAs MESFET Photoresponse to CW Laser Probe

An effect, in planar GaAs MESFETs, whereby a sharp increaSe in optical gain at the transistor edges occurs, is reported. This gain effect only manifests when a large resistor is inserted in ser-ies with the gate, to produce the conditions for photovoltaic gate biasing. The mechanism for increased gãin, at t'he edges, is suggested to be due to carrier photogeneration in the substrate that is sub...

High gain single GaAs nanowire photodetector

Two-dimensional Modeling of Depletion Layer of MESFET GaAs

A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, the influence of the geometry of the component like distance between the gate and drain, or between gate and source. All simulations revealed the existence of a high electric field region near the gate contact, who create a depopulated zone around the gate, but the preceding studies hav...